Structural characterization of ion beam synthesized epitaxial ErSi2-x layers

Materials Research Society Symposium - Proceedings

Volumn 402, Issue , 1996, Pages 499-504

  Bender, H ^a   Wu, M F ^a   Vantomme, A ^a   Pattyn, H ^a   Langouche, G ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; EPITAXIAL GROWTH; ERBIUM COMPOUNDS; FILM PREPARATION; ION BEAMS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; STRUCTURE (COMPOSITION); SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CHANNELLED IMPLANTATION; ERBIUM SILICIDE; ION BEAM SYNTHESIS; POLYCRYSTALLINE SURFACE LAYERS; SILICIDE; VACANCY ORDERING;

THIN FILMS;

EID: 0029780631     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)