SCOPUS 정보 검색 플랫폼

Volumn 184-185, Issue , 1998, Pages 95-99

Measurements by X-ray topography of the critical thickness of ZnSe grown on GaAs

e NONE

Author keywords

Critical thickness; Dislocations; X ray topography; ZnSe

Indexed keywords

EID: 0342889536 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)80301-1 Document Type: Article

Times cited : (10)

References (14)

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