Excitonic line broadening in PbSrSe thin films grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3621-3625

  Shen, W Z ^a   Wu, H Z ^b   McCann, P J ^b  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b University of Oklahoma   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; ALLOY DISORDER; COUPLING STRENGTHS; EFFECTIVE MASS; EXCITONIC ENERGY; III-V AND II-VI SEMICONDUCTORS; LATTICE DEFORMATION; LINE BROADENING; LOW TEMPERATURES; OPTICAL PHONONS; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THEORETICAL APPROACH; THEORETICAL MODELS;

EPITAXIAL GROWTH; LEAD; MOLECULAR BEAM EPITAXY; THIN FILMS; X RAY DIFFRACTION;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 0037087454     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1448897     Document Type: Article

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