MBE growth of wide band gap Pb1-xSrxSe on Si(1 1 1) substrate

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 763-766

  Xu, G ^a   Fang, X M ^a   McCann, P J ^a   Shi, Z ^a  

^a University of Oklahoma   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; BARIUM COMPOUNDS; CRYSTAL ORIENTATION; ENERGY GAP; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SINGLE CRYSTALS; ULTRAVIOLET DETECTORS; X RAY CRYSTALLOGRAPHY;

BARIUM FLUORIDE; FULL WIDTH AT HALF MAXIMUM (FWHM); LEAD STRONTIUM SELENIDE;

SEMICONDUCTING FILMS;

EID: 0033896069     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00757-5     Document Type: Article

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