Structural analysis of 6H-SiC(0 0 0 1) surface by RHEED rocking curves

Surface Science

Volumn 493, Issue 1-3, 2001, Pages 246-252

  Aoyama, Tomohiro ^a   Han, Yujie ^a   Ichimiya, Ayahiko ^a   Hisada, Yoshiyuki ^b   Mukainakano, Shinichi ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

Reflection high energy electron diffraction (RHEED); Silicon carbide; Surface relaxation and reconstruction

Indexed keywords

ANNEALING; ELECTRON MOBILITY; HYDROGEN; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; STRUCTURAL ANALYSIS; ULTRAHIGH VACUUM;

SURFACE RELAXATION;

SILICON CARBIDE;

EID: 0035501204     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01224-9     Document Type: Conference Paper

References (21)