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Volumn 91, Issue 2, 2002, Pages 884-886

Defects in N/Ge coimplanted GaN studied by positron annihilation

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH DISTRIBUTION; DOPANT ATOMS; GAN LAYERS; IMPLANTED SAMPLES; VACANCY-TYPE DEFECTS;

GALLIUM NITRIDE; GERMANIUM; POSITRON ANNIHILATION SPECTROSCOPY; VACANCIES;

DEFECTS;

EID: 0037080899 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1421627 Document Type: Article

Times cited : (15)

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