TEM analysis of epitaxial semiconductor layers with high stacking fault densities considering artifacts induced by the cross-section geometry

Ultramicroscopy

Volumn 81, Issue 3-4, 2000, Pages 279-288

  Walter, T ^a   Gerthsen, D ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

Electron diffraction; Specimen related methods specifically for solid interfaces and multilayers; Transmission electron microscopy

Indexed keywords

ELECTRON DIFFRACTION; EPITAXIAL GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); MULTILAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SELENIUM; SEMICONDUCTOR GROWTH; STACKING FAULTS; SUBSTRATES;

BURGERS VECTORS; CROSS SECTION GEOMETRY; EPITAXIAL SEMICONDUCTOR LAYERS; HIGH STACKING DENSITY; SHOCKLEY PARTIAL DISLOCATIONS;

TRANSMISSION ELECTRON MICROSCOPY;

ANALYTICAL ERROR; ARTICLE; ARTIFACT; CONTRAST; IMAGING; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0034024368     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(99)00184-9     Document Type: Article

References (23)

1. J. P. Hirth, J. Lothe, Theory of Dislocations, Wiley, New York, 2nd edition, 1992.
2. Guha S., DePuydt J.M., Haase M.A., Qin J., Cheng H. Appl. Phys. Lett. 63:1993;607.
3. Kuo L.H., Salamanca-Riba L., Wu B.J., Haugen G.M., DePuydt J.M., Hofler G., Cheng H. J. Vac. Sci. Technol. B 13:1995;1694.
4. Lehto N. Phys. Rev. B. 55:1997;15601.
5. E.R. Weber, H. Alexander, J. Phys. (Colloq.) 4 (1983) C-319.
6. Bandic Z.Z., McGill T.C., Ikonic Z. Phys. Rev. B. 56:1997;3564.
7. G. Thomas, M.J. Goringe, Transmission Electron Microscopy, Tech Books, pp. 149-169.
8. Petruzello J., Greenberg B.L., Cammack D.A., Dalby R. J. Appl. Phys. 63:1988;2299.
9. Rosenauer A., Reisinger T., Franzen F., Schütz G., Hahn B., Wolf K., Zweck J., Gebhardt W. J. Appl. Phys. 79:1996;4124.
10. Heun S., Pagel J.J., Sorba L., Rubini S., Franciosi A., Bonard J.-M., Ganière J.-D. Appl. Phys. Lett. 70:1997;237.
11. Li D., Gonsalves J.M., Otsuka N., Qui J., Kobayashi M., Gunshor R.L. Appl. Phys. Lett. 57:1990;449.
12. Kuo L.H., Kimura K., Miwa S., Yasuda T., Ohtake A., Yao T. Appl. Surf. Sci. 117:1997;495.
13. Chin-Yu Yeh, Z.W. Lu, S. Froyen, A. Zunger, Phys. Rev. B 46 (1992) 10 086.
14. Pandey R., Sutjianto A. Solid State Commun. 91:1994;269.
15. Samarth N., Luo H., Fardyna J.K., Qadri S.B., Lee Y.R., Ramdas A.K., Otsuka N. Appl. Phys. Lett. 54:1989;2680.
16. Grün M., Klingshirn C., Rosenauer A., Zweck J., Gebhardt W. Appl. Phys. Lett. 63:1993;2947.
17. Takeuchi S., Suzuki K., Maeda K., Iwanaga H. Philos. Mag. A. 50:1984;171.
18. Chew N.G., Cullis A.G. Ultramicroscopy. 23:1987;175.
19. Walter T., Gerthsen D., Litz Th., Waag A., Landwehr G. Inst. Phys. Conf. Ser. 157:1997;311.
20. Stadelmann P. Ultramicroscopy. 21:1987;131.
21. Ni J., Lai X., Gu B. J. Appl. Phys. 73:1993;4260.
22. Xiao H.Z., Daykin A.C. Ultramicroscopy. 53:1994;325.
23. Batstone J.L., Steeds J.W., Wright P.J. Philos. Mag. A. 66:1992;609.