SEGR: A unique failure mode for power MOSFETs in spacecraft

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1871-1874

  Allenspach, M ^a   Brews, J R ^a   Galloway, K F ^a   Johnson, G H ^a   Schrimpf, R D ^a   Pease, R L ^b   Titus, J L ^c   Wheatley, C F ^b  

^a University of Arizona   (United States)

^b RLP Research Inc ^*

^c NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; FAILURE ANALYSIS; GATES (TRANSISTOR); IONS; SPACE APPLICATIONS; COMPUTER SIMULATION; POWER ELECTRONICS; SPACECRAFT;

HEAVY ION INDUCED DAMAGE; SINGLE EVENT GATE RUPTURE (SEGR); DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR (DMOS); GATE RAPTURE;

MOSFET DEVICES;

EID: 0030274031     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00218-1     Document Type: Article

References (11)

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8. D.K. Nichols et al., Single-Event Gate Rupture in Commercial Power MOSFETs, RADECS 93 Conference Proceedings, pp. 462-467 (1993).
9. I. Mouret et al., Experimental Evidence of the Temperature and Angular Dependence in SEGR, RADECS 95 Conference Proceedings (1995).
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