Size reduction of the Ge islands by utilizing the strain fields from the lower-temperature-grown hut-clusters buried in the Si matrix

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 58-61

  Takamiya, H ^a   Miura, M ^b   Mitsui, J ^a   Koh, S ^b   Hattori, T ^a   Shiraki, Y ^b  

^a TOKYO CITY UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Buried islands; Ge islands; Hut clusters; Low temperature growth; Ordering of the islands; Size reduction

Indexed keywords

ATOMIC FORCE MICROSCOPY; LOW TEMPERATURE EFFECTS; MOLECULAR ORIENTATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SUBSTRATES;

GERMANIUM ISLANDS;

SEMICONDUCTING GERMANIUM;

EID: 0037074877     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00757-7     Document Type: Conference Paper

References (11)