Formation process and ordering of self-assembled Ge islands

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 104-107

  Miura, M ^a   Hartmann, J M ^b   Zhang, J ^b   Joyce, B ^b   Shiraki, Y ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; MULTILAYERS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); HUT-CLUSTERS; VERTICAL ORDERING;

SEMICONDUCTING FILMS;

EID: 0034225273     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00845-2     Document Type: Article

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