Electron microscope characterization of CdSe/ZnSe quantum dots based on molecular dynamics structure relaxations

Ultramicroscopy

Volumn 81, Issue 3-4, 2000, Pages 289-300

  Scheerschmidt, K ^a   Conrad, D ^a   Kirmse, H ^b   Schneider, R ^b   Neumann, W ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

Author keywords

Electron microscope structure characterization; Molecular dynamics; Quantum dots

Indexed keywords

COMPUTER SIMULATION; ELECTRONIC PROPERTIES; HIGH RESOLUTION ELECTRON MICROSCOPY; IMAGING TECHNIQUES; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; OPTICAL PROPERTIES; RELAXATION PROCESSES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

EMPIRICAL POTENTIALS; ENERGY RELAXATION; VIRTUAL TRUNCATION;

ELECTRON MICROSCOPES;

CADMIUM DERIVATIVE; SELENIUM DERIVATIVE; ZINC DERIVATIVE;

ARTICLE; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; ENERGY; MOLECULAR DYNAMICS; QUANTUM MECHANICS; SEMICONDUCTOR; SIMULATION; TECHNIQUE;

EID: 0034024155     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(99)00185-0     Document Type: Article

References (22)

1. Bimberg D., Grundmann M., Ledentsov N.N. Quantum Dot Heterostructures. 1998;Wiley, Chicester.
2. Wang L.W., Zunger A. Pseudopotential theory of nanometer silicon quantum dots. Kamat P.V., Meisel D. Semiconductor Nanoclusters - Physical, Chemical, and Catalytic Aspects. 1997;Elsevier, Amsterdam.
3. Lentzen M., Gerthsen D., Förster A., Urban K. Appl. Phys. Lett. 60:1992;74.
4. Stier O., Grundmann M., Bimberg D. Phys. Rev. B. 59:1999;5688.
5. Rouvimov S., Scheerschmidt K. Phys. Status Solidi A. 150:1995;471.
6. Liao X.Z.et al. Phys. Rev. B. 58:1998;R4235.
7. Lepski D. Phys. Status Solidi A. 66:1980;479.
8. Lepski D. Phys. Status Solidi A. 23:1974;543.
9. Christiansen S., Albrecht M., Strunk H.P., Maier H.J. Appl. Phys. Lett. 64:1994;3617.
10. Androussi Y., Benabbas T., Levebvre A. Philos. Mag. Lett. 79:1999;201.
11. Kirmse H., Neumann W., Wiebach T., Köhler R., Scheerschmidt K., Conrad D. Mater. Sci. Eng. B. 69:2000;361.
12. Kirmse H., Schneider R., Rabe R., Neumann W., Henneberger F. Appl. Phys. Lett. 72:1998;1329.
13. Kirmse H., Schneider R., Scheerschmidt K., Conrad D., Neumann W. J. Microsc. 194:1999;183.
14. Gear C.W. Numerical Initial Value Problems in Ordinary Differential Equations. 1971;Prentice-Hall, Englewood Cliffs, NJ.
15. Stillinger F.H., Weber T.A. Phys. Rev. B. 31:1985;5262.
16. Tersoff J. Phys. Rev. B. 39:1989;5566.
17. Balamane H., Halicioglu T., Tiller W.A. Phys. Rev. B. 46:1992;2250.
18. Wang Z.Q., Stroud D., Markworth A.J. Phys. Rev. B. 40:1989;3129.
19. Conrad D., Scheerschmidt K., Gösele U. Appl. Phys. A. 62:1996;7.
20. CERIUS program package, Molecular Simulations Inc., San Diego.
21. Rabe M., Lowisch M., Henneberger F. J. Crystal. Growth. 185:1998;248.
22. Stadelmann P.A. Ultramicroscopy. 21:1987;131.