2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle

Journal of Computational Physics

Volumn 176, Issue 1, 2002, Pages 70-92

  Romano, Vittorio ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

Charge transport; Electron devices; Hydrodynamical models; Numerical methods for hyperbolic systems

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; MAXIMUM ENTROPY METHODS; MONTE CARLO METHODS; PHONONS;

2D SIMULATIONS; ELECTRON TRANSPORT; FITTING PARAMETERS; HYDRODYNAMICAL MODELING; HYPERBOLIC SYSTEM; MAXIMUM ENTROPY PRINCIPLE; MESFETS; MODEL-BASED OPC; NUMERICAL METHOD FOR HYPERBOLIC SYSTEM; NUMERICAL SCHEME;

NUMERICAL METHODS;

EID: 0037050815     PISSN: 00219991     EISSN: None     Source Type: Journal    
DOI: 10.1006/jcph.2001.6968     Document Type: Article

References (35)

1. Non parabolic band transport in semiconductors: Closure of the moment equations
2. Non parabolic band transport in semiconductors: Closure of the production terms in the moment equations
3. Non-oscillatory central differencing for hyperbolic conservation law
4. Nonoscillatory central schemes for multidimensional hyperbolic conservation laws
5. Central schemes for systems of balance laws
6. Central schemes for balance laws of relaxation type
7. Nonparabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
8. Moment equations with maximum entropy closure for carrier transport in semiconductors devices: Validation in bulk silicon
9. Simulation of Submicron Silicon Diode with a Non-Parabolic Hydrodynamical Model Based on the Maximum Entropy Principle
10. Analysis and Simulation of Semiconductor Devices
11. The Drift-Diffusion Equation and Its Applications in MOSFET Modeling
12. Semiconductor Equations
13. An improved energy-transport model including nonparabolicity and non-maxwellian distribution effects
14. Transient semiconductor device simulation including energy balance equation
15. On a hierarchy of macroscopic models for semiconductors
16. Rational Extended Thermodynamics
17. Extended Irreversible Thermodynamics
18. Moment closure hierarchies for kinetic theories
19. Improved hydrodynamical model for carrier transport in semiconductors
20. Transport equations for electron in two-valley semiconductors
21. An investigation on steady-state velocity overshoot in silicon
22. Numerical solutions for hydrodynamical models of semiconductors
23. Extended hydrodynamical model of carrier transport in semiconductors
24. Modeling impact ionization in BJT by means of spherical harmonics expansions of the Boltzmann transport equation
25. Modeling electron and hole transport with full-band structure effects by means of the spherical-harmonics expansion of the BTE
26. An improved hydrodynamical transport model for silicon
27. Solid State Physics
28. Riemann Solvers and Numerical Methods for Fluid Dynamics
29. Numerical Methods for Conservation Laws
30. Uniformily high-order accurate nonoscillatory scheme I
31. Energy models for one-carrier transport in semiconductor devices
32. Hydrodynamic Modeling of Short-Channel Devices Using an Upwind Flux Vector Splitting Scheme
33. A Generalized Finite Element Method for Hydrodynamic Modeling of Short-Channel Devices
34. The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials
35. Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling