Moment equations with maximum entropy closure for carrier transport in semiconductor devices: Validation in bulk silicon

VLSI Design

Volumn 10, Issue 4, 2000, Pages 335-354

  Anile, A M ^a   Muscato, O ^a   Romano, V ^b  

^a UNIVERSITY OF CATANIA   (Italy)

^b POLITECNICO DI BARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; ELECTRIC NETWORK SYNTHESIS; ELECTRON TRANSPORT PROPERTIES; ENTROPY; INTEGRATED CIRCUIT LAYOUT; METHOD OF MOMENTS; MONTE CARLO METHODS; SEMICONDUCTING SILICON;

KANE DISPERSION RELATION;

VLSI CIRCUITS;

EID: 0033676705     PISSN: 1065514X     EISSN: None     Source Type: None    
DOI: 10.1155/2000/82945     Document Type: Article

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