메뉴 건너뛰기




Volumn 24, Issue 7, 2001, Pages 439-471

Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices

Author keywords

Hydrodynamical models for charge transport; Hyperbolic system; Numerical methods for conservation law; Semiconductors

Indexed keywords

COMPUTER SIMULATION; ELECTRON SCATTERING; MATHEMATICAL MODELS; MONTE CARLO METHODS; PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES;

EID: 0035837537     PISSN: 01704214     EISSN: None     Source Type: Journal    
DOI: 10.1002/mma.220     Document Type: Article
Times cited : (46)

References (34)
  • 1
    • 0014705867 scopus 로고
    • Transport equations for electron in two-valley semiconductors
    • Blotekjaer K. Transport equations for electron in two-valley semiconductors. IEEE Transactions on Electron Devices 1970; ED-17:38-47.
    • (1970) IEEE Transactions on Electron Devices , vol.ED-17 , pp. 38-47
    • Blotekjaer, K.1
  • 2
    • 0001452920 scopus 로고
    • An investigation on steady-state velocity overshoot in silicon
    • Baccarani G, Wordeman MR. An investigation on steady-state velocity overshoot in silicon. Solid-State Electronics 1982; 29:970-977.
    • (1982) Solid-State Electronics , vol.29 , pp. 970-977
    • Baccarani, G.1    Wordeman, M.R.2
  • 3
    • 0000505779 scopus 로고
    • Improved hydrodynamical model for carrier transport in semiconductors
    • Anile AM, Muscato O. Improved hydrodynamical model for carrier transport in semiconductors. Physical Review B 1995; 51:16,728-16,740.
    • (1995) Physical Review B , vol.51 , pp. 16
    • Anile, A.M.1    Muscato, O.2
  • 7
    • 0026735256 scopus 로고
    • An improved energy-transport model including non-parabolicity and non-maxwellian distribution effects
    • Chen D, Kan EC, Ravaioli U, Shu C-W, Dutton R. An improved energy-transport model including non-parabolicity and non-maxwellian distribution effects. IEEE on Electron Device Letters 1992; 13:26-28.
    • (1992) IEEE on Electron Device Letters , vol.13 , pp. 26-28
    • Chen, D.1    Kan, E.C.2    Ravaioli, U.3    Shu, C.-W.4    Dutton, R.5
  • 8
    • 0026880348 scopus 로고
    • Transient semiconductor device simulation including energy balance equation
    • Lyumkis E, Polsky B, Shir A, Visocky P. Transient semiconductor device simulation including energy balance equation. Compel 1992; 11:311-325.
    • (1992) Compel , vol.11 , pp. 311-325
    • Lyumkis, E.1    Polsky, B.2    Shir, A.3    Visocky, P.4
  • 9
    • 0030537690 scopus 로고    scopus 로고
    • On a hierarchy of macroscopic models for semiconductors
    • Abdallah NB, Degond P. On a hierarchy of macroscopic models for semiconductors. Journal of Mathematical Physics 1996; 37:3308-3333.
    • (1996) Journal of Mathematical Physics , vol.37 , pp. 3308-3333
    • Abdallah, N.B.1    Degond, P.2
  • 10
    • 0034450587 scopus 로고    scopus 로고
    • Extended hydrodynamical model of carrier transport in semiconductors
    • Anile AM, Romano V, Russo G. Extended hydrodynamical model of carrier transport in semiconductors. SIAM Journal on Applied Mathematics 2000; 61(1):74-101.
    • (2000) SIAM Journal on Applied Mathematics , vol.61 , Issue.1 , pp. 74-101
    • Anile, A.M.1    Romano, V.2    Russo, G.3
  • 13
    • 0030534703 scopus 로고    scopus 로고
    • Moment closure hierarchies for kinetic theories
    • Levermore CD. Moment closure hierarchies for kinetic theories. Journal of Statistical Physics 1996; 83: 331-407.
    • (1996) Journal of Statistical Physics , vol.83 , pp. 331-407
    • Levermore, C.D.1
  • 14
    • 0001297101 scopus 로고
    • Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
    • Anile AM, Pennisi S. Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors. Physical Review B 1992; 46:13,186-13,193.
    • (1992) Physical Review B , vol.46 , pp. 13
    • Anile, A.M.1    Pennisi, S.2
  • 15
    • 0032315415 scopus 로고    scopus 로고
    • Hyperbolic hydrodynamical model of carrier transport in semiconductors
    • Anile AM, Romano V, Russo G. Hyperbolic hydrodynamical model of carrier transport in semiconductors. VLSI Design 1998; 8(1-4):521-525.
    • (1998) VLSI Design , vol.8 , Issue.1-4 , pp. 521-525
    • Anile, A.M.1    Romano, V.2    Russo, G.3
  • 16
    • 0033438601 scopus 로고    scopus 로고
    • Non parabolic band transport in semiconductors: Closure of the moment equations
    • Anile AM, Romano V. Non parabolic band transport in semiconductors: closure of the moment equations. Continuum Mechanics and Thermodynamics 1999; 11:307-325.
    • (1999) Continuum Mechanics and Thermodynamics , vol.11 , pp. 307-325
    • Anile, A.M.1    Romano, V.2
  • 17
    • 0034346648 scopus 로고    scopus 로고
    • Non parabolic band transport in semiconductors: Closure of the production terms in the moment equations
    • Romano V. Non parabolic band transport in semiconductors: closure of the production terms in the moment equations. Continuum Mechanics and Thermodynamics 1999; 12:31-51.
    • (1999) Continuum Mechanics and Thermodynamics , vol.12 , pp. 31-51
    • Romano, V.1
  • 18
    • 0033676705 scopus 로고    scopus 로고
    • Moment equations with the maximum entropy closure for carrier transport in semiconductor devices: Validation in bulk silicon
    • Anile AM, Muscato O, Romano V. Moment equations with the maximum entropy closure for carrier transport in semiconductor devices: validation in bulk silicon. VLSI Design 2000; 10:335-354.
    • (2000) VLSI Design , vol.10 , pp. 335-354
    • Anile, A.M.1    Muscato, O.2    Romano, V.3
  • 19
    • 0003470014 scopus 로고
    • Sounders College Publishing International Edition: Philadelphia
    • Ashcroft NW, Mermin ND. Solid State Physics. Sounders College Publishing International Edition: Philadelphia 1976.
    • (1976) Solid State Physics
    • Ashcroft, N.W.1    Mermin, N.D.2
  • 20
    • 35949025517 scopus 로고
    • The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials
    • Jacoboni C, Reggiani L. The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials. Review of Modern Physics 1983; 55:645-705.
    • (1983) Review of Modern Physics , vol.55 , pp. 645-705
    • Jacoboni, C.1    Reggiani, L.2
  • 24
    • 4243227379 scopus 로고
    • Monte Carlo study of electron transport in silicon inversion layer
    • Fischetti M, Laux S. Monte Carlo study of electron transport in silicon inversion layer. Physical Review B 1993; 48:232-244.
    • (1993) Physical Review B , vol.48 , pp. 232-244
    • Fischetti, M.1    Laux, S.2
  • 25
    • 0027881053 scopus 로고
    • An improved hydrodynamical transport model for silicon
    • Tang T-W, Ramaswamy S, Nam J. An improved hydrodynamical transport model for silicon. IEEE on Electron Devices 1993; 40:1469-1477.
    • (1993) IEEE on Electron Devices , vol.40 , pp. 1469-1477
    • Tang, T.-W.1    Ramaswamy, S.2    Nam, J.3
  • 31
    • 28144455569 scopus 로고
    • Non-oscillatory central differencing for hyperbolic conservation law
    • Nessyahu H, Tadmor E. Non-oscillatory central differencing for hyperbolic conservation law. Journal of Computational Physics 1990; 87:408-463.
    • (1990) Journal of Computational Physics , vol.87 , pp. 408-463
    • Nessyahu, H.1    Tadmor, E.2
  • 32
    • 0034378480 scopus 로고    scopus 로고
    • Numerical solutions for hydrodynamical models of semiconductors
    • 3AS 2000; 10: 1099-1120.
    • (2000) 3AS , vol.10 , pp. 1099-1120
    • Romano, V.1    Russo, G.2
  • 33
    • 0026107291 scopus 로고
    • Solution of hydrodynamic device model using high-order nonoscillatory shock capturing algorithms
    • Fatemi E, Jerome J, Osher S. Solution of hydrodynamic device model using high-order nonoscillatory shock capturing algorithms. IEEE Transaction on Computer-Aided Design 1991; 10:232-398.
    • (1991) IEEE Transaction on Computer-Aided Design , vol.10 , pp. 232-398
    • Fatemi, E.1    Jerome, J.2    Osher, S.3
  • 34
    • 0003079830 scopus 로고
    • Comparison of semiconductor transport model using a Monte Carlo consistency test
    • Ramaswamy S, Tang T-W. Comparison of semiconductor transport model using a Monte Carlo consistency test. IEEE Electron Devices 1994; 41:76-83.
    • (1994) IEEE Electron Devices , vol.41 , pp. 76-83
    • Ramaswamy, S.1    Tang, T.-W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.