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Volumn 12, Issue 1, 2000, Pages 31-51

Non parabolic band transport in semiconductors: Closure of the production terms in the moment equations

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EID: 0034346648     PISSN: 09351175     EISSN: None     Source Type: Journal    
DOI: 10.1007/s001610050121     Document Type: Article
Times cited : (64)

References (23)
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    • The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials
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    • Fischetti, M.1    Laux, S.2
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    • An improved hydrodynamical transport model for silicon
    • Tang T-W Ramaswamy S. and Nam J. (1993), An Improved Hydrodynamical Transport Model for Silicon, IEEE on Electron devices 40: 1469-1477
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    • Maximization of the entropy in non-equilibrium
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    • 0026852585 scopus 로고
    • Transport coefficients for a silicon hydrodynamic model extracted from inhomogeneous Monte-Carlo simulations
    • Lee S-C and Tang T-W (1992), Transport coefficients for a silicon hydrodynamic model extracted from inhomogeneous Monte-Carlo simulations, Solid-State Electronics 35: 561-569
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    • Comparison of semiconductor transport model using a Monte Carlo consistency test
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    • Ramaswamy, S.1    Tang, T.-W.2
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    • A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon
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    • Abramo, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.