Single-crystalline Si on insulator in confined structures fabricated by two-step metal-induced crystallization of amorphous Si

Applied Physics Letters

Volumn 81, Issue 24, 2002, Pages 4634-4636

  Liu, Yaocheng ^a   Deal, Michael D ^a   Saraswat, Krishna C ^a   Plummer, James D ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTAL STRUCTURE; CRYSTALLIZATION; MOSFET DEVICES; SINGLE CRYSTALS;

SOLID-PHASE EPITAXY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0037049479     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1527977     Document Type: Article

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