Influences of directional crystallization using field aided lateral crystallization on the electrical characteristics of poly-Si thin film transistors

Thin Solid Films

Volumn 408, Issue 1-2, 2002, Pages 240-244

  Lee, Jae Bok ^a   Choi, Duck Kyun ^a   Yang, Yong Ho ^b  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Field aided lateral crystallization; Leakage current; Polycrystalline silicon thin film transistor

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; ELECTRIC FIELDS; ELECTRODES; LEAKAGE CURRENTS; NICKEL COMPOUNDS; POLYSILICON;

FIELD AIDED LATERAL CRYSTALLIZATION (FALC);

THIN FILM TRANSISTORS;

EID: 0037012517     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00133-5     Document Type: Article

References (13)