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Volumn 18, Issue 15, 1999, Pages 1209-1211
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Polycrystalline thin film transistors fabricated by FALC (field aided lateral crystallization) technique
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER MOBILITY;
CRYSTALLIZATION;
ELECTRIC CURRENTS;
ELECTRIC FIELD EFFECTS;
NICKEL;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTING SILICON;
THRESHOLD VOLTAGE;
FIELD ASSISTED LATERAL CRYSTALLIZATION (FALC);
THIN FILM TRANSISTORS;
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EID: 0032635627
PISSN: 02618028
EISSN: None
Source Type: Journal
DOI: 10.1023/A:1006698101609 Document Type: Article |
Times cited : (20)
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References (5)
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