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Volumn 18, Issue 15, 1999, Pages 1209-1211

Polycrystalline thin film transistors fabricated by FALC (field aided lateral crystallization) technique

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTALLIZATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; NICKEL; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

EID: 0032635627     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006698101609     Document Type: Article
Times cited : (20)

References (5)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.