Ambient pressure dried SiO2 aerogel film on GaAs for application to interlayer dielectrics

Thin Solid Films

Volumn 420-421, Issue , 2002, Pages 461-464

  Park, Sung Woo ^a   Jung, Sang Bae ^a   Yang, Jun Kyu ^a   Park, Hyung Ho ^a   Kim, Hae Cheon ^b  

^a Yonsei University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Ambient pressure drying; GaAs; SiO2 aerogel; Trimethylchlorosilane

Indexed keywords

AEROGELS; CURRENT DENSITY; DIELECTRIC FILMS; ETCHING; HYDROCHLORIC ACID; LEAKAGE CURRENTS; METALLOGRAPHIC MICROSTRUCTURE; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SILICA;

AEROGEL FILMS;

THIN FILMS;

EID: 0037011042     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00818-0     Document Type: Conference Paper

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