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Volumn 332, Issue 1-2, 1998, Pages 437-443

Effect of GaAs surface treatments using HCl or (NH4)2SX solutions on the interfacial bonding states induced by deposition of Au

Author keywords

ARXPS; Bonding transition; GaAs; Interfacial reaction

Indexed keywords

BONDING; CHEMICAL BONDS; DEPOSITION; GOLD; PASSIVATION; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM ARSENIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL BONDING TRANSITIONS;

HETEROJUNCTIONS;

EID: 0032476350 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01204-8 Document Type: Article

Times cited : (11)

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