SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 416, Issue 1-2, 2002, Pages 62-65

Microstructure control of YMnO3 thin films on Si (100) substrates

(4) Yoo, Dong Chul a Lee, Jeong Yong a Kim, Ik Soo b Kim, Yong Tae b

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Korea Institute of Science and Technology (South Korea)

Author keywords

Crystallization; Transmission electron microscopy (TEM); Yttrium compound

Indexed keywords

CRYSTAL MICROSTRUCTURE; CURRENT DENSITY; HEAT TREATMENT; POLYCRYSTALLINE MATERIALS; SILICON; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; YTTRIUM COMPOUNDS;

LEAKAGE CURRENT DENSITY;

FERROELECTRIC THIN FILMS;

EID: 0037009692 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(02)00703-4 Document Type: Article

Times cited : (16)

References (15)

1
- 0001041395
- Yi W.C., Choe J.S., Moon C.R., Kwun S.I., Yoon J.G. Appl. Phys. Lett. 73:1998;903.
- (1998) Appl. Phys. Lett. , vol.73 , pp. 903
- Yi, W.C.¹ Choe, J.S.² Moon, C.R.³ Kwun, S.I.⁴ Yoon, J.G.⁵

2
- 0032072767
- Kitahata H., Tadanaga K., Minami T., Fujimura N., Ito T. J. Am. Ceram. Soc. 81:1998;1357.
- (1998) J. Am. Ceram. Soc. , vol.81 , pp. 1357
- Kitahata, H.¹ Tadanaga, K.² Minami, T.³ Fujimura, N.⁴ Ito, T.⁵

3
- 0000083864
- Lee H.N., Kim Y.T., Choh S.H. Appl. Phys. Lett. 76:2000;1066.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1066
- Lee, H.N.¹ Kim, Y.T.² Choh, S.H.³

4
- 0001001492
- Yoshimura T., Fujimura N., Ito T. Appl. Phys. Lett. 73:1998;414.
- (1998) Appl. Phys. Lett. , vol.73 , pp. 414
- Yoshimura, T.¹ Fujimura, N.² Ito, T.³

5
- 0000649150
- Rokuta E., Hotta Y., Tabata H., Kobayashi H., Kawai T. J. Appl. Phys. 88:2000;6598.
- (2000) J. Appl. Phys. , vol.88 , pp. 6598
- Rokuta, E.¹ Hotta, Y.² Tabata, H.³ Kobayashi, H.⁴ Kawai, T.⁵

6
- 0032294365
- Imada S., Shouriki S., Tokumitsu E., Ishiwara H. Jpn. J. Appl. Phys. 37:1998;6497.
- (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 6497
- Imada, S.¹ Shouriki, S.² Tokumitsu, E.³ Ishiwara, H.⁴

7
- 0000578829
- Fujimura N., Ishida T., Yoshimura T., Ito T. Appl. Phys. Lett. 69:1996;1011.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 1011
- Fujimura, N.¹ Ishida, T.² Yoshimura, T.³ Ito, T.⁴

8
- 0001736839
- Fujimura N., Azuma S.I., Aoki N., Yoshimura T. J. Appl. Phys. 80:1996;7084.
- (1996) J. Appl. Phys. , vol.80 , pp. 7084
- Fujimura, N.¹ Azuma, S.I.² Aoki, N.³ Yoshimura, T.⁴

9
- 0032606737
- Lee H.N., Kim Y.T., Park Y.K. Appl. Phys. Lett. 74:1999;3887.
- (1999) Appl. Phys. Lett. , vol.74 , pp. 3887
- Lee, H.N.¹ Kim, Y.T.² Park, Y.K.³

10
- 0000862342
- Yi W.C., Seo C.S., Kwun S.I., Yoon J.G. Appl. Phys. Lett. 77:2000;1044.
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1044
- Yi, W.C.¹ Seo, C.S.² Kwun, S.I.³ Yoon, J.G.⁴

11
- 0001086672
- Yoshimura T., Fujimura N., Ito D., Ito T. J. Appl. Phys. 87:2000;3444.
- (2000) J. Appl. Phys. , vol.87 , pp. 3444
- Yoshimura, T.¹ Fujimura, N.² Ito, D.³ Ito, T.⁴

12
- 0035501981
- Yoo D.C., Lee J.Y., Kim I.S., Kim Y.T. J. Cryst. Growth. 233:2001;243.
- (2001) J. Cryst. Growth , vol.233 , pp. 243
- Yoo, D.C.¹ Lee, J.Y.² Kim, I.S.³ Kim, Y.T.⁴

13
- 0000743660
- Levit M., Zolotoyabko E., Weiss B.Z. Appl. Phys. Lett. 69:1996;4242.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 4242
- Levit, M.¹ Zolotoyabko, E.² Weiss, B.Z.³

14
- 0000618999
- Seong N.J., Yang C.H., Shin W.C., Yoon S.G. Appl. Phys. Lett. 72:1998;1374.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1374
- Seong, N.J.¹ Yang, C.H.² Shin, W.C.³ Yoon, S.G.⁴

15
- 0011075312
- Li W.P., Liu Y.M., Zhang R., Chen J., Yuan X.L., Zhou Y.G., Shen B., Jiang R.L., Shi Y., Liu Z.G., Zheng Y.D. Appl. Phys. A. 72:2001;85.
- (2001) Appl. Phys. A , vol.72 , pp. 85
- Li, W.P.¹ Liu, Y.M.² Zhang, R.³ Chen, J.⁴ Yuan, X.L.⁵ Zhou, Y.G.⁶ Shen, B.⁷ Jiang, R.L.⁸ Shi, Y.⁹ Liu, Z.G.¹⁰ Zheng, Y.D.¹¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.