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Volumn 233, Issue 1-2, 2001, Pages 243-247
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Effects of post-annealing on the microstructure and ferroelectric properties of YMnO3 thin films on Si
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Author keywords
A1. transmission electron microscopy; B1. yittrium compounds; B2. ferroelectric materials
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Indexed keywords
CRACK INITIATION;
CRYSTAL MICROSTRUCTURE;
CRYSTAL ORIENTATION;
CRYSTALLIZATION;
CURRENT VOLTAGE CHARACTERISTICS;
HIGH RESOLUTION ELECTRON MICROSCOPY;
HYSTERESIS;
RAPID THERMAL ANNEALING;
RATE CONSTANTS;
SEMICONDUCTING SILICON;
SPUTTER DEPOSITION;
SUBSTRATES;
THERMAL EXPANSION;
YTTRIUM COMPOUNDS;
RAPID THERMAL PROCESSORS (RTP);
FERROELECTRIC THIN FILMS;
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EID: 0035501981
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)01563-9 Document Type: Article |
Times cited : (10)
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References (15)
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