Structure investigationn of luminescent porous GaAs layers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4415, Issue , 2001, Pages 98-103

  Bendorius, R ^a   Jasutis, V ^a   Pacebutas V ^a   Sabataityte, J ^a   Snitka, V ^a   Simkiene I ^a   Tvardauskas, H ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

AFM; Photoluminescence; Porous GaAs; XPS

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ETCHING; PHOTOLUMINESCENCE; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY;

ELECTROCHEMICAL ETCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034934036     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.425477     Document Type: Conference Paper

References (4)

1. Optical properties of porous GaAs
2. Initiation and formation of porous GaAs