Highly reliable ferroelectric memories using BLT thin films and robust integration schemes

IEEE Electron Device Letters

Volumn 23, Issue 12, 2002, Pages 743-745

  Yang, B ^a   Kang, Y M ^b   Lee, S S ^b   Noh, K H ^b   Lee, S W ^b   Kim, N K ^b   Kweon, S Y ^b   Yeom, S J ^b   Park, Y J ^b  

^a Kumoh National Institute of Technology   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

BLT film; Ferroelectric memories; Impurities; Process control; Reliability

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; FERROELECTRIC THIN FILMS; HIGH TEMPERATURE EFFECTS; IMPURITIES; RANDOM ACCESS STORAGE; RELIABILITY; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

FERROELECTRIC DEGRADATION; FERROELECTRIC MEMORY; PLATINUM ELECTRODE;

FERROELECTRIC DEVICES;

EID: 0037005149     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.806299     Document Type: Letter

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