Comparison of iron gettering effectiveness in silicon between ion-implantation-induced damage and poly-crystalline silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 12, 2002, Pages 7267-7271

  Horikawa, Mitsuhiro ^a,b   Terashima, Koichi ^a  

^a NEC CORPORATION   (Japan)

^b Elpida Memory Inc   (Japan)

Author keywords

Deep level transient spectroscopy; Gettering; Ion implantation; Iron; Photoluminescence; Silicon

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; ION IMPLANTATION; PHOTOLUMINESCENCE; POLYSILICON; SILICON WAFERS; SOLUBILITY;

GETTERING;

POLYCRYSTALLINE MATERIALS;

EID: 0036994906     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.7267     Document Type: Article

References (24)

1. W. B. Henley, L. Jastrebski and N. F. Haddad: MRS Symp. Proc. 262 (1992) 993.
2. International Technology Roadmap for Semiconductors: 1999 Edition (Semiconductor Industry Association, Austin, TX, 1999).
3. J. S. Kang and D. K. Schroder: J. Appl. Phys. 65 (1989) 2974.
4. M. Horikawa: Electrochem. Solid-State Lett. 3 (2000) 343.
5. D. Gilles, E. R. Weber and S. Hahn: Phys. Rev. Lett. 64 (1990) 196.
6. M. Aoki, A. Hara and A. Ohsawa: J. Appl. Phys. 72 (1992) 895.
7. S. Sano, S. Sumita, T. Shigematsu and N. Fujino: Semiconductor Silicon 1994, Proc. Electrochemical Society, eds. H. R. Huff, W. Bergholz and K. Sumino (Electrochemical Society, Penington, 1994) p. 784.
8. P. A. Stolk, J. L. Benton, D. J. Eaglesham, D. C. Jacobson, J.-Y. Cheng, J. M. Poate, S. M. Myers and T. E. Haynes: Appl. Phys. Lett. 68 (1996) 51.
9. S. Tobe, Y. Hayamizu and Y. Kitagawara: J. Appl. Phys. 84 (1998) 1279.
10. H. Lemke: Phys. Status Solidi A 64 (1981) 215.
11. L. C Kimerling and J. L. Benton: Physica B 116 (1983) 297.
12. S. Ogushi, S. Sadamitsu, K. Marsden, Y. Koike and M. Sano: Jpn. J. Appl. Phys. 36 (1997) 6601.
13. M. Hourai, T. Naridomi, Y. Oka, K. Murakami, S. Sumita, N. Fujino and T. Shiraiwa: Jpn. J. Appl. Phys. 27 (1988) L2361.
14. G. Zoth and W. Bergholz: J. Appl. Phys. 67 (1990) 6764.
15. K. Graff: Metal Impurities in Silicon-Device Fabrication (Springer, Berlin, 2000) 2nd reviced ed.
16. E. R. Weber: Appl. Phys. A 30 (1983) 1.
17. C. G. Kirkpatrick, J. R. Noonan and B. G. Streetman: Radiat. Eff. 30 (1976) 97.
18. K. Terashima, K. Miyoshi and M. Tajima: Jpn. J. Appl. Phys. 39 (2000) 2198.
19. Y. Hayamizu. S. Ushio and T. Takenaka: Mater. Res. Soc. Symp. Proc. 262 (1992) 1005.
20. J. S. Kang and D. K. Schroder: J. Appl. Phys. 65 (1989) 2974.
21. Y. Hayamizu, S. Tobe. H. Takeno and Y. Kitagawara: Semiconductor Silicon 1998, Proc. Electrochemical Society, eds. H. R. Huff, U. Gosele and H. Tsuya (Electrochemical Society, Penington, 1998) p. 1080.
22. J. L Benton, S. Libertino, P. Kringhoj, D. J. Eaglesham, J. M. Poate and S. Coffa: J. Appl. Phys. 82 (1997) 120.
23. K. Wunstel and P. Wagner: Appl. Phys. A 27 (1982) 207.
24. Sara H. Muller, Gijs M. Tuynman, Eric G. Sieverts and C. A. J. Ammerlaan: Phys. Rev. B 25 (1982) 25.