Photoluminescence of low-energy B+-implanted silicon under ultraviolet light excitation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2198-2202

  Terashima, Koichi ^a   Miyoshi, Kousuke ^a   Tajima, Michio ^b  

^a NEC CORPORATION   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Ion implantation; Photoluminescence; Point defect; Silicon

Indexed keywords

ANNEALING; BAND STRUCTURE; ION IMPLANTATION; PHOTOLUMINESCENCE; POINT DEFECTS; ULTRAVIOLET RADIATION;

PENETRATION DEPTH; ULTRAVIOLET LIGHT EXCITATION;

SEMICONDUCTING SILICON;

EID: 0033717671     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2198     Document Type: Article

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