Dry etch technology for large area flat panels

Semiconductor International

Volumn 22, Issue 6, 1999, Pages

  Mendoza, Frank ^a   Sarette, Bill ^a   McReynolds, Darrell ^b,c   Richardson, Brett ^b,d   Holland, John ^b,e  

^a MOTOROLA INC   (United States)

^b LAM RESEARCH CORPORATION   (United States)

^c FED   (Germany)

^d Lam Research   (Germany)

^e Process R and D Group   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EMISSION DEVICES; OXIDE FILMS; PLASMA DISPLAYS;

AMORPHOUS SILICON; DRY ETCHING; FIELD EFFECT SEMICONDUCTOR DEVICES; FLAT PANEL DISPLAYS; MOLYBDENUM; OXIDES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR PLASMAS; SUBSTRATES; THIN FILMS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 6544263872     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. P.H Holloway, J Sebastion, T. Trottier, H Stuart, R. Peterson, Solid State Technology, August 1995, p 47
2. C.A. Spindt, Applied Physics, Vol 39, No 7, 1968, p 3504
3. A. Shih, A Demos, R Beer, Solid State Technology, May 1996, p 71
4. Y.J Kuo, Electochemical Society, Vol 137, No 6, 1990, p 1907
5. U S Patent Document 5,055,077, Nov. 1991.