Displacement damage effects in InGaAs detectors: Experimental results and semi-empirical model prediction

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2466-2472

  Barde, S ^a   Ecoffet, R ^a   Costeraste, J ^a   Meygret, A ^a   Hugon, X ^b  

^a CNES   (France)

^b ATMEL Grenoble   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; PHOTODETECTORS; PROTON IRRADIATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

DARK CURRENT VALUES; DISPLACEMENT DAMAGE; MULTIPLEXED DETECTOR ARRAYS; RANDOM TELEGRAPH SIGNAL;

PHOTODIODES;

EID: 0034450437     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903794     Document Type: Conference Paper

References (20)

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