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Volumn , Issue , 2002, Pages 1178-1181

A new high-rate deposition method for thin film crystalline Si solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRON BEAMS; ELLIPSOMETRY; FREE RADICALS; GRAIN SIZE AND SHAPE; MOLECULES; MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; STAINLESS STEEL; SUBSTRATES; THIN FILMS;

EID: 0036948570     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (14)
  • 1
    • 0032570387 scopus 로고    scopus 로고
    • Substrates for thin crystalline silicon solar cells
    • A.W. Blakers, "Substrates for thin crystalline silicon solar cells", Solar Energy Materials & Solar Cells 51, 1998, pp. 385-392.
    • (1998) Solar Energy Materials & Solar Cells , vol.51 , pp. 385-392
    • Blakers, A.W.1
  • 2
    • 0000123515 scopus 로고    scopus 로고
    • Low temperature silicon deposition for large area sensors and solar cells
    • M.B. Schubert, "Low temperature silicon deposition for large area sensors and solar cells", Thin Solid Films 337, 1999, pp.240-247.
    • (1999) Thin Solid Films , vol.337 , pp. 240-247
    • Schubert, M.B.1
  • 4
    • 0000366256 scopus 로고    scopus 로고
    • High-rate deposition of a-Si:H films using a flow plasma-chemical method with electron beam activation
    • R.G. Sharafutdinov, et al., "High-rate deposition of a-Si:H films using a flow plasma-chemical method with electron beam activation", J. Appl. Phys. 79, 1996, pp. 7274-7277.
    • (1996) J. Appl. Phys. , vol.79 , pp. 7274-7277
    • Sharafutdinov, R.G.1
  • 8
    • 84949556787 scopus 로고    scopus 로고
    • Use of a gas jet deposition technique to prepare microcrystalline Si solar cells
    • S. J. Jones, R. Crucet, and M. Izu, "Use of a gas jet deposition technique to prepare microcrystalline Si solar cells", Twenty-eighth IEEE PVSC, 2000, pp. 134-137.
    • Twenty-eighth IEEE PVSC, 2000 , pp. 134-137
    • Jones, S.J.1    Crucet, R.2    Izu, M.3
  • 10
    • 0035875477 scopus 로고    scopus 로고
    • Ultrafast deposition of microcrystalline Si by thermal plasma chemical
    • Y.K. Chae, H. Ohno, K. Eguchi, and T. Yoshida, "Ultrafast deposition of microcrystalline Si by thermal plasma chemical", J. Appl. Phys. 89, 2001, pp.8311-8315.
    • (2001) J. Appl. Phys. , vol.89 , pp. 8311-8315
    • Chae, Y.K.1    Ohno, H.2    Eguchi, K.3    Yoshida, T.4
  • 11
    • 0032377928 scopus 로고    scopus 로고
    • Growth of microcrystalline silicon film by electron beam exited plasma chemical vapor deposition without hydrogen dilution
    • M. Imaizumi, K. Okitsu, M. Yamaguchi, T. Hara, T. Ito, I. Konomi, M. Ban, M. Tokai, and K. Kawamura, "Growth of microcrystalline silicon film by electron beam exited plasma chemical vapor deposition without hydrogen dilution", J. Vac. Sci. Technol. A 16, 1998, pp.3134-3137.
    • (1998) J. Vac. Sci. Technol. A , vol.16 , pp. 3134-3137
    • Imaizumi, M.1    Okitsu, K.2    Yamaguchi, M.3    Hara, T.4    Ito, T.5    Konomi, I.6    Ban, M.7    Tokai, M.8    Kawamura, K.9
  • 13
    • 0001539746 scopus 로고    scopus 로고
    • Anatomy of μc-Si thin films by plasma enhanced chemical vapor deposition: An investigation by spectroscopic ellipsometry
    • M. Losurdo, R. Rizzoli, C. Summonte, G. Cicala, P. Capezzuto, and G. Bruno, "Anatomy of μc-Si thin films by plasma enhanced chemical vapor deposition: An investigation by spectroscopic ellipsometry", J. Appl. Phys. 88, 2000, pp. 2408-2414.
    • (2000) J. Appl. Phys. , vol.88 , pp. 2408-2414
    • Losurdo, M.1    Rizzoli, R.2    Summonte, C.3    Cicala, G.4    Capezzuto, P.5    Bruno, G.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.