Use of a gas jet deposition technique to prepare microcrystalline Si solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 134-137

  Jones, S J ^a   Crucet, R ^a   Izu, M ^a  

^a Energy Conversion Devices Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DEPOSITION RATES; EFFICIENCY; FIGHTER AIRCRAFT; SILICON; SILICON ALLOYS; SOLAR CELLS;

GAS-JET DEPOSITION; HIGH DEPOSITION RATES; HIGH-EFFICIENCY; IRRADIATION TREATMENT; MICROCRYSTALLINE SI; MULTI-JUNCTION STRUCTURES; STABILIZED EFFICIENCY; TANDEM JUNCTION;

SILICON SOLAR CELLS;

EID: 84949556787     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915772     Document Type: Conference Paper

References (5)

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2. S.J. Jones, R. Criicet, X. Deng, D.L. Williamson, and M. Izu, Proc. for Spring 2000 Mat. Res. Soc. Meeting, to be published.
3. C.C. Tsai, "Advances in a-Si Semiconductors I", ed. Fritzsche, World Scientific, Singapore, 1988, 123.
4. th IEEE Photo. Sp. Con., 1997, 711.
5. nd World Conf. and Exh. on PV Solar Energy Conv., 1998, 351.