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Volumn 449, Issue , 1997, Pages 367-372

Growth of hexagonal gallium nitride films on the (111) surfaces of silicon with zinc oxide buffer layers

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ENERGY ELECTRON DIFFRACTION; MICROSCOPIC EXAMINATION; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

EID: 0030706449     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (9)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.