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Volumn 449, Issue , 1997, Pages 367-372
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Growth of hexagonal gallium nitride films on the (111) surfaces of silicon with zinc oxide buffer layers
a,a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
HIGH ENERGY ELECTRON DIFFRACTION;
MICROSCOPIC EXAMINATION;
NITRIDES;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR GROWTH;
X RAY DIFFRACTION ANALYSIS;
X RAY PHOTOELECTRON SPECTROSCOPY;
ZINC OXIDE;
GALLIUM NITRIDE;
CHEMICAL VAPOR DEPOSITION;
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EID: 0030706449
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (6)
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References (9)
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