Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 787-790

  Link, A ^a   Ambacher, O ^a   Smorchkova, I P ^b   Mishra, U K ^b   Speck, J S ^b   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; HALL EFFECT; INTERFACES (MATERIALS); POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SHUBNIKOV-DE HAAS EFFECT;

ALUMINUM GALLIUM NITRIDE; HOLE GAS; PIEZOELECTRIC POLARIZATION; SPONTANEOUS POLARIZATION;

HETEROJUNCTIONS;

EID: 0035126745     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.787     Document Type: Article

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