Ferroelectricity of one-axis-preferred-oriented polycrystalline Pb(Zr, Ti) O3 films prepared by pulsed-metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 92, Issue 11, 2002, Pages 6768-6772

  Funakubo, Hiroshi ^a   Aratani, Masanori ^a   Oikawa, Takahiro ^a   Tokita, Kouji ^a   Saito, Keisuke ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; EPITAXIAL GROWTH; FERROELECTRICITY; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

POLYCRYSTALLINE RHOMBOHEDRAL FILMS;

POLYCRYSTALLINE MATERIALS;

EID: 0036906024     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1513889     Document Type: Article

References (21)

1. A. Mannish, Ferroelectrics 102, 69 (1990).
2. T. Li, P. Zawadzki, and R. Stall, Integr. Ferroelectr. 18, 155 (1997).
3. C.M. Foster, G.R. Bai, R. Csencsits, J. Vetrone, R. Jammy, L.A. Wills, and J. Amano, J. Appl. Phys. 8, 2349 (1997).
4. H. Suzuki, T. Koizumi, Y. Kondo, and S. Kaneko, J. Eur. Ceram. Soc. 19, 1397 (1999).
5. H. Suzuki, M.B. Othman, K. Murakami, K. Kaneko, and T. Hayashi, Jpn. J. Appl. Phys., Part 1 35, 4896 (1996).
6. S. Hirano, T. Yogo, K. Kikuta, Y. Araki, M. Saitou, and S. Ogasawara, J. Am. Ceram. Soc. 75, 2785 (1992).
7. K. Maki, N. Soyama, S. Mori, and K. Ogi, Integr. Ferroelectr. 30, 193 (2000).
8. K. Amnuma et al., Jpn. J. Appl. Phys., Part 1 39, 2098 (2000).
9. Z. Huang, Q. Zhang, and R.W. Whatmore, J. Appl. Phys. 85, 7355 (1999).
10. K. Nagashima, M. Aratani, and H. Funakubo, Jpn. J. Appl. Phys., Part 2 39, L996 (2000).
11. K. Nagashima and H. Funakubo, J. Appl. Phys. 39, 212 (2000).
12. M. Aratani, T. Ozeki, and H. Funakubo, Jpn. J. Appl. Phys., Part 2 40, L343 (2001).
13. M. Aratani, K. Nagashima, and H. Funakubo, Jpn. J. Appl. Phys., Part 1 40, 4126 (2001).
14. M. Aratani, T. Oikawa, T. Ozeki, and H. Funakubo, Appl. Phys. Lett. 79, 1000 (2001).
15. N. Okuda, K. Saito, and H. Funakubo, Jpn. J. Appl. Phys., Part 1 39, 572 (2000).
16. M. Motet, S. Rossinger, P. Hagenman, S. Misat, M. Devillers, H. Linden, E. Haverkamp, W. Corbeek, and P. Larsen, Integr. Ferroelectr. 31, 305 (2000).
17. E. Hong, J. Shin, J. Choi, C. Hwang, and H. Kim, J. Mater. Res. 15, 1284 (2000).
18. M. Otsu, H. Funakubo, K. Shinozaki, and N. Mizutani, Trans. Mater. Res. Soc. Jpn. 14A, 1655 (1994).
19. K. Saito, T. Oikawa, T. Kurosawa, T. Akai, and H. Funakubo, Trans. Mater. Res. Soc. Jpn. 27, 215 (2001).
20. F. Xu, S. Trolier-McKinstry, W. Ren, B. Xu, Z. Xu, and K. Hemker, J. Appl. Phys. 89, 1336 (2001).
21. K. Nagashima and H. Funakubo, Jpn. J. Appl. Phys., Part 1 39, 212 (2000).