InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy

Journal of Applied Physics

Volumn 89, Issue 7, 2001, Pages 4186-4188

  Li, Y F ^a   Wang, J Z ^a   Ye, X L ^a   Xu, B ^a   Liu, F Q ^a   Ding, D ^a   Zhang, J F ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035307559     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1350616     Document Type: Article

References (12)

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