An extrinsic-inductance independent approach for direct extraction of HBT intrinsic circuit parameters

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 12, 2001, Pages 2300-2305

  Horng, Tzyy Sheng ^a,b   Wu, Jian Ming ^b   Huang, Hui Hsiang ^b  

^a IEEE   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Heterojunction bipolar transistors; Parameter extraction; Semiconductor device modeling

Indexed keywords

EXTRINSIC INDUCTANCE;

ELECTRIC IMPEDANCE; EQUIVALENT CIRCUITS; INDUCTANCE; SEMICONDUCTOR DEVICE MODELS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035683284     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.971613     Document Type: Conference Paper

References (8)

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7. T.-S. Horng, J.-M. Wu, and H.-H. Huang, "An extrinsic-inductance independent approach for direct extraction of HBT intrinsic circuit parameters," in IEEE MTT-S Int. Microwave Symp. Dig., 2001, pp. 1761-1764.
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