An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 733-736

  Wasige, E ^a   Sheinman, B ^a   Sidorov, V ^a   Cohen, S ^a   Ritter, D ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; EQUIVALENT CIRCUITS; SCATTERING PARAMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

DIRECT EXTRACTION METHOD; EXTRINSIC BASE COLLECTOR CAPACITANCES; FREQUENCY MEASUREMENTS; INTRINSIC BASE COLLECTOR CAPACITANCES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036063570     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. Direct extraction of HBT equivalent-circuit elements
2. A new method for determining the FET small-signal equivalent circuit
3. A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor
4. Parameter extraction method for heterojunction bipolar transistors
5. Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors
6. Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit
7. Stepping toward standard methods of small-signal parameter extraction for HBTs
8. A semianalytical parameter-extraction procedure for HBT equivalent circuit
9. Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured S-parameters
10. Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data
11. Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit
12. Comparison of hybrid Pi and Tee HBT circuit topologies and their relationship to large signal modeling
13. An extrinsic-inductance independent approach for direct extraction of HBT intrinsic circuit parameters
14. Direct extraction method for internal equivalent circuit parameters of the HBT small-signal hybrid-π model
15. A new analytical and broadband method for determining the HBT small-signal model parameters
16. A novel direct extraction method for internal equivalent circuit parameters of HBT small-signal hybrid-Pi model