Direct parameter-extraction method for HBT small-signal model

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 2, 2002, Pages 529-536

  Bousnina, Sami ^a,b   Mandeville, Pierre ^a,c   Kouki, Ammar B ^a,d   Surridge, Robert ^c   Ghannouchi, Fadhel M ^a,b  

^a IEEE   (Canada)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^c NORTEL NETWORKS   (Canada)

^d ÉCOLE DE TECHNOLOGIE SUPÉRIEURE   (Canada)

Author keywords

Broad band parameter extraction method; Closed form expressions; Heterojunction bipolar transistors

Indexed keywords

PARAMETER-EXTRACTION;

APPROXIMATION THEORY; ERROR ANALYSIS; MICROWAVE CIRCUITS; OPTIMIZATION; SEMICONDUCTING GALLIUM COMPOUNDS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036473960     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.982232     Document Type: Article

References (9)

1. Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit
2. Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data
3. Analytic parameter extraction of the HBT equivalent circuit with T-like topology from measured S-parameter
4. Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors
5. DC to high-frequency HBT-model parameter evaluation using impedance block conditioned optimization
6. A semianalytical parameter-extraction procedure for HBT equivalent circuit
7. Small-signal distributed model for GaAs HBT's and S-parameter prediction at millimeter-wave frequencies
8. A new analytical and broadband method for determining the HBT small-signal model parameters
9. A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor