XPS study of ion-beam-assisted formation of Si nanostructures in thin SiO2 layers

Surface and Interface Analysis

Volumn 33, Issue 12, 2002, Pages 914-917

  Kesler, V G ^a   Yanovskaya, S G ^a   Kachurin, G A ^a   Leier, A F ^a   Logvinsky, L M ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Radiation induced processes; Si nanostructures; XPS

Indexed keywords

CRYSTALLIZATION; DIFFUSION; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; SILICA; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ION IRRADIATION;

NANOSTRUCTURED MATERIALS;

EID: 0036902181     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1447     Document Type: Article

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