Structure study of Si nanocrystals formed by electron-induced reduction of SiO2 at high temperature

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7140-7143

  Takeguchi, Masaki ^a   Furuya, Kazuo ^a   Yoshihara, Kazuhiro ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Beta tin structure; Electron stimulated desorption; Nanocrystal; Si; SiO2; UHV FE TEM

Indexed keywords

CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; ELECTRON DIFFRACTION; ELECTRON IRRADIATION; NANOSTRUCTURED MATERIALS; REDUCTION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICA; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

BETA-TIN STRUCTURE; ELECTRON-STIMULATED DESORPTION; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); ULTRAHIGH VACUUM FIELD EMISSION TRANSMISSION ELECTRON MICROSCOPY;

NANOTECHNOLOGY;

EID: 0033319959     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.7140     Document Type: Article

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