A finite element method for the quantum hydrodynamic model for semiconductor devices

Computers and Mathematics with Applications

Volumn 31, Issue 7, 1996, Pages 17-26

  Chen, Z ^a  

^a SOUTHERN METHODIST UNIVERSITY   (United States)

Author keywords

Conservation law; Finite element method; Finite volume method; Mixed method; Quantum hydrodynamic model; Resonant tunneling diode

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FINITE DIFFERENCE METHOD; FINITE VOLUME METHOD; HYDRODYNAMICS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; TUNNEL DIODES;

CONSERVATION LAW; ELECTRON FLOW; MIXED METHOD; QUANTUM HYDRODYNAMICS; RESONANT TUNNELING DIODE;

FINITE ELEMENT METHOD;

EID: 0030127934     PISSN: 08981221     EISSN: None     Source Type: Journal    
DOI: 10.1016/0898-1221(96)00015-6     Document Type: Article

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