Doping properties of the ion-beam sputtered SiGe film

Materials Research Society Symposium - Proceedings

Volumn 441, Issue , 1997, Pages 289-293

  Qi, Wen Jie ^a   Wang, Zhi Sheng ^a   Gu, Zhi Gu,ang ^a   Ru, Guo Ping ^a   Jiang, Guo Bao ^a   Li, Bing Zong ^a   Chu, Paul K ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; ION BEAMS; ION IMPLANTATION; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SPUTTERING;

HALL MOBILITY;

SEMICONDUCTING FILMS;

EID: 0030721103     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)