|
Volumn 74, Issue 23, 2002, Pages
|
Looking at trace impurities on silicon wafers with synchroton radiation
|
Author keywords
[No Author keywords available]
|
Indexed keywords
NONDESTRUCTIVE TECHNIQUES;
FLUORESCENCE;
IMPURITIES;
RADIATION;
SILICON WAFERS;
TRACE ELEMENTS;
CHEMICAL ANALYSIS;
METAL;
OXIDE;
SILICON;
SILICON DIOXIDE;
CHEMICAL ANALYSIS;
CHEMICAL PROCEDURES;
CONTAMINATION;
ENERGY;
IMPLANTATION;
INTEGRATED CIRCUIT;
REVIEW;
SURFACE PROPERTY;
SYNCHROTRON RADIATION;
TECHNOLOGY;
THICKNESS;
ARTICLE;
SEMICONDUCTOR;
STANDARD;
SYNCHROTRON;
X RAY;
SEMICONDUCTORS;
SILICON;
SURFACE PROPERTIES;
SYNCHROTRONS;
TRANSISTORS;
X-RAYS;
|
EID: 0036895882
PISSN: 00032700
EISSN: None
Source Type: Journal
DOI: None Document Type: Review |
Times cited : (12)
|
References (26)
|