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Volumn 21, Issue 6, 1998, Pages 173-176

Surface contamination control using integrated cleaning

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; MIXTURES; PROCESS CONTROL; SILICON WAFERS; SURFACE CLEANING; VAPOR DEPOSITION;

EID: 0032097016     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (8)

References (12)
  • 1
    • 75849157034 scopus 로고
    • A HF vapor etch process for integration in cluster-tool processes: Characteristics and applications
    • Cleaning Technology in Semiconductor Device Manufacturing
    • Vermeulen, et al. "A HF vapor etch process for integration in cluster-tool processes: characteristics and applications," Cleaning Technology in Semiconductor Device Manufacturing, ECS Proceedings, Vol. 94-7, 241 (1994).
    • (1994) ECS Proceedings , vol.94 , Issue.7 , pp. 241
    • Vermeulen1
  • 2
    • 0023979392 scopus 로고
    • Evaluating the feasibility of dry cleaning of silicon wafers
    • J. Ruzyllo, "Evaluating the feasibility of dry cleaning of silicon wafers," Microcontamination 6(3), 39 (1988).
    • (1988) Microcontamination , vol.6 , Issue.3 , pp. 39
    • Ruzyllo, J.1
  • 3
    • 85053997596 scopus 로고    scopus 로고
    • In situ vapor phase processes in an integrated cluster system for pre-gate oxide silicon surface cleaning
    • Cleaning Technology in Semiconductor Manufacturing
    • Y. Ma, M.L. Green, "In situ vapor phase processes in an integrated cluster system for pre-gate oxide silicon surface cleaning," Cleaning Technology in Semiconductor Manufacturing, ECS Proceedings, Vol. 95-20, 115 (1996).
    • (1996) ECS Proceedings , vol.95 , Issue.20 , pp. 115
    • Ma, Y.1    Green, M.L.2
  • 4
    • 0031365095 scopus 로고    scopus 로고
    • Integrated vapor phase cleaning and pure NO nitridation for gate stack formation
    • Rapid Thermal and Integrated Processing VI
    • F. Glowaci, et al., "Integrated vapor phase cleaning and pure NO nitridation for gate stack formation," Rapid Thermal and Integrated Processing VI, MRS Symposium Proceedings Vol. 470, 229 (1997);
    • (1997) MRS Symposium Proceedings , vol.470 , pp. 229
    • Glowaci, F.1
  • 5
    • 0031383590 scopus 로고    scopus 로고
    • Characterization of oxide etching and wafer cleaning using vapor-phase anhydrous HP and ozone
    • Rapid Thermal and Integrated Processing VI
    • B. Froeschle, et al., "Characterization of oxide etching and wafer cleaning using vapor-phase anhydrous HP and ozone," Rapid Thermal and Integrated Processing VI, MRS Symposium Proceedings, Vol. 470, 237 (1997).
    • (1997) MRS Symposium Proceedings , vol.470 , pp. 237
    • Froeschle, B.1
  • 6
    • 0031334518 scopus 로고    scopus 로고
    • Gate stack formation using a fully integrated single wafer cluster tool
    • Rapid Thermal and Integrated Processing VI
    • D.C. Frystak, et al., "Gate stack formation using a fully integrated single wafer cluster tool," Rapid Thermal and Integrated Processing VI, MRS Symposium Proceedings, Vol. 470, 221 (1997).
    • (1997) MRS Symposium Proceedings , vol.470 , pp. 221
    • Frystak, D.C.1
  • 7
    • 30844436384 scopus 로고    scopus 로고
    • Investigation of single-wafer, low temperature epitaxial silicon deposition with clustered HF pre-clean
    • Thirteenth International Conference on Chemical Vapor Deposition
    • R. Wise, et al., "Investigation of single-wafer, low temperature epitaxial silicon deposition with clustered HF pre-clean," Thirteenth International Conference on Chemical Vapor Deposition, ECS Proceedings, Vol. 96-5, 287 (1996).
    • (1996) ECS Proceedings , vol.96 , Issue.5 , pp. 287
    • Wise, R.1
  • 8
    • 84865934036 scopus 로고    scopus 로고
    • 2O prior to low temperature epitaxial silicon deposition
    • Cleaning Technology in Semiconductor Manufacturing
    • 2O prior to low temperature epitaxial silicon deposition," Cleaning Technology in Semiconductor Manufacturing, ECS Proceedings, Vol. 97-35, 62 (1998).
    • (1998) ECS Proceedings , vol.97 , Issue.35 , pp. 62
    • Frystak, D.C.1
  • 9
    • 84865925855 scopus 로고    scopus 로고
    • "Method for forming hemispherical grained silicon," US Patent 5634974
    • R.A. Weimer, et al., "Method for forming hemispherical grained silicon," US Patent 5634974.
    • Weimer, R.A.1
  • 10
    • 0031364171 scopus 로고    scopus 로고
    • Integrated rapid thermal CVD processing solutions for 0.18-0.25 μm technologies
    • Rapid Thermal and Integrated Processing VI
    • H. Gilboa, et al., "Integrated rapid thermal CVD processing solutions for 0.18-0.25 μm technologies,' Rapid Thermal and Integrated Processing VI, MRS Symposium Proceedings, Vol. 470, 215 (1997).
    • (1997) MRS Symposium Proceedings , vol.470 , pp. 215
    • Gilboa, H.1
  • 11
    • 0031118111 scopus 로고    scopus 로고
    • Cleaning silicon wafers with an argon/nitrogen cryogenic aerosol process
    • J.F. Weygand, et al., "Cleaning silicon wafers with an argon/nitrogen cryogenic aerosol process," Micro 15(4), 47(1997).
    • (1997) Micro , vol.15 , Issue.4 , pp. 47
    • Weygand, J.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.