Ohmic contact formation on n-type 6H-SiC using NiSi2

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Nakamura, Tomonori ^a   Shimada, Hisanori ^a   Satoh, Masataka ^a  

^a HOSEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; METALLIC FILMS; NICKEL; NICKEL ALLOYS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; STOICHIOMETRY; SUBSTRATES;

NICKEL SILICIDE;

OHMIC CONTACTS;

EID: 18844469493     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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