Dry etching of GaP with emphasis on selective etching over AlGaP

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2252-2255

  Epple, J H ^a   Sanchez, C ^a   Chung, T ^a   Cheng, K Y ^a   Hsieh, K C ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; AUGER ELECTRON SPECTROSCOPY; DRY ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON COMPOUNDS;

ALUMINUM GALLIUM PHOSPHIDE; GALLIUM PHOSPHIDE; SILICON TETRACHLORIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036883080     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1517260     Document Type: Article

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