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Volumn 146, Issue 3, 1999, Pages 1172-1180
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On the selective etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 vs. InP in alkaline K3Fe(CN)6 solutions. An electrochemical study
a a |
Author keywords
[No Author keywords available]
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Indexed keywords
DISSOLUTION;
ELECTRIC IMPEDANCE MEASUREMENT;
ELECTROCHEMISTRY;
ETCHING;
POTASSIUM COMPOUNDS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
ELECTROLESS ETCHING;
ROTATING DISK VOLTAMMETRY;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 0033097211
PISSN: 00134651
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1391741 Document Type: Article |
Times cited : (7)
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References (32)
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