Selective reactive ion etching of GaAs/AlAs in BCl3/SF6 for gate recess

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 5, 2000, Pages 2505-2508

  Lee, Y S ^a   Upadhyaya, K ^a   Nordheden, K J ^a   Kao, M Y ^b  

^a UNIVERSITY OF KANSAS   (United States)

^b TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; ETHANOL; GATES (TRANSISTOR); HYDROCHLORIC ACID; MIXTURES; PRESSURE EFFECTS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SULFUR COMPOUNDS;

SELECTIVE REACTIVE ION ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034268806     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1288134     Document Type: Article

References (8)

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