Subsurface interstitials as promoters of three-dimensional growth of Ti on Si(111): An x-ray standing wave, x-ray photoelectron spectroscopy, and atomic force microscopy investigation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 20, Issue 6, 2002, Pages 1997-2003

  Kuri, G ^a   Schmidt, Th ^b   Hagen, V ^c   Materlik, G ^a,d   Wiesendanger, R ^c   Falta, J ^b  

^a DESY   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

^c UNIVERSITY OF HAMBURG   (Germany)

^d DIAMOND LIGHT SOURCE LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ATOMIC FORCE MICROSCOPY; GROWTH (MATERIALS); MORPHOLOGY; SEMICONDUCTING SILICON; SURFACE PHENOMENA; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;

TITANIUM;

EID: 0036865191     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1513638     Document Type: Article

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