Favorable formation of the C49-TiSi2 phase on Si(001) determined by first-principles calculations

Applied Physics Letters

Volumn 72, Issue 10, 1998, Pages 1176-1178

  Yu, B D ^a   Miyamoto, Yoshiyuki ^a   Sugino, Osamu ^a   Sasaki, T ^b   Ohno, T ^b  

^a NEC CORPORATION   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000868165     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121005     Document Type: Article

References (18)

1. L. A. Clevenber and R. W. Mann, Mater. Res. Soc. Symp. Proc. 320, 15 (1994).
2. R. Beyers and R. Sinclair, J. Appl. Phys. 57, 5240 (1985).
3. H. Jeon, C. A. Sukow, J. W. Honeycutt, G. A. Rozgonyi, and R. J. Nemanich, J. Appl. Phys. 71, 4269 (1992).
4. J. B. Lasky, J. S. Nakos, and O. J. Geiss, IEEE Trans. Electron Devices 38, 262 (1991).
5. R. J. Nemanich, H. Jeon, C. A. Sukow, J. W. Honeycutt, and G. A. Rozgonyi, Mater. Res. Soc. Symp. Proc. 260, 195 (1992).
6. R. T. Tung, Appl. Phys. Lett. 68, 1933 (1996).
7. D. M. Ceperley and B. J. Alder, Phys. Rev. Lett. 45, 566 (1980);
8. J. P. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1984).
9. X. Gonze, R. Stumpf, and M. Scheffler, Phys. Rev. B 44, 8503 (1991).
10. M. Fuchs and M. Scheffler (unpublished).
11. B. D. Yu and A. Oshiyama, Phys. Rev. B 52, 8337 (1995).
12. B. D. Yu and M. Scheffler, Phys. Rev. B 55, 13916 (1997).
13. R. Stumpf and M. Scheffler, Comput. Phys. Commun. 79, 447 (1994).
14. K. Ishiyama, Y. Taga, and A. Ichimiya, Phys. Rev. B 51, 2380 (1995).
15. K. Miwa and A. Fukumoto, Phys. Rev. B 52, 14748 (1995).
16. Z. Ma and L. H. Allen, Phys. Rev. B 49, 13501 (1994).
17. K. Ikeda, K. Kawamura, T. Nakamura, and K. Nakajima, Jpn. Soc. Appl. Phys. 2, 674 (1995).
18. O. Sugino, in The Review of High Pressure Science and Technology, edited by M. Nakahara (Japan Society of High Pressure Science and Technology, Japan 1998), Vol. 7 (in press).