GaN-based lasers on SiC: Influence of mirror reflectivity on L-I characteristics

Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 512-516

  Schwegler, V ^a   Schad, S S ^a   Scherer, M ^a   Kamp, M ^a   Ulu, G ^b   Emsley, M ^b   Unlu M S ^b   Lell, A ^c   Bader, S ^c   Hahn, B ^c   Lugauer, H J ^c   Kuhn F ^c   Weimar, A ^c   Harle V ^c  

^a UNIVERSITY OF ULM   (Germany)

^b BOSTON UNIVERSITY   (United States)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

A1. Atomic force microscopy; B3. SCH laser diodes

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CURRENTS; GALLIUM NITRIDE; LIGHT REFLECTION; MIRRORS; OPTICAL FIBERS; QUANTUM EFFICIENCY; SILICON CARBIDE;

THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0035451262     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01299-4     Document Type: Article

References (9)